Thermal characterization of InAs interfacial misfit arrays using nanosecond thermoreflectance method

Thermal properties are of the utmost importance because of the ever growing demands given to us by high-power and ultrafast electronics. A nanosecond thermoreflectance method was developed to determine the thermal conductivities of InAs interfacial misfit arrays (IMF). These interfacial misfit arrays were designed to improve the optical properties, such as photoluminescence, of these materials in order to improve electronic devices. A study was performed to see if the thermal properties of these materials were affected in any way. The nanosecond thermoreflectance method was benchmarked with control samples of InAs and GaAs substrates, and the thermal conductivities were close to that of bulk value. After performing the experiments, it was found that the thermal conductivity varies inversely with photoluminescence. It was also found that the thermal interface resistance between the growth and the substrate was inversely proportional to the thickness of the IMF growth.