Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers

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dc.creatorAlam, Md Hasibul
dc.creatorXu, Zifan
dc.creatorChowdhury, Sayema
dc.creatorJiang, Zhanzhi
dc.creatorTaneja, Deepyanti
dc.creatorBanerjee, Sanjay K.
dc.creatorLai, Keji
dc.creatorBraga, Maria Helena
dc.creatorAkinwande, Deji
dc.date.accessioned2024-01-29T13:55:26Z
dc.date.available2024-01-29T13:55:26Z
dc.date.issued2020-01-25
dc.description.abstractElectrostatic gating of two-dimensional (2D) materials with ionic liquids (ILs), leading to the accumulation of high surface charge carrier densities, has been often exploited in 2D devices. However, the intrinsic liquid nature of ILs, their sensitivity to humidity, and the stress induced in frozen liquids inhibit ILs from constituting an ideal platform for electrostatic gating. Here we report a lithium-ion solid electrolyte substrate, demonstrating its application in high- performance back-gated n-type MoS2 and p-type WSe2 transistors with sub-threshold values approaching the ideal limit of 60 mV/dec and complementary inverter amplifier gain of 34, the highest among comparable amplifiers. Remarkably, these outstanding values were obtained under 1 V power supply. Microscopic studies of the transistor channel using microwave impedance microscopy reveal a homogeneous channel formation, indicative of a smooth interface between the TMD and underlying electrolytic substrate. These results establish lithium-ion substrates as a promising alternative to ILs for advanced thin-film devices.
dc.description.departmentCenter for Dynamics and Control of Materials
dc.description.sponsorshipD.A. acknowledges the PECASE award from the Army Research Office (ARO) and the NSF MRSEC Center (DMR-1720595). The MIM experiment was supported by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences, under the award no. DE-SC0019025. Z.X. acknowledges partial support by the Welch Foundation award F-1814. This work was performed in part at the University of Texas Microelectronics Research Center, a member of the National Nanotechnology Coordinated Infrastructure (NNCI), which is supported by the National Science Foundation (ECCS-1542159).
dc.identifier.citationAlam, M.H., Xu, Z., Chowdhury, S. et al. Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers. Nat Commun 11, 3203 (2020). https://doi.org/10.1038/s41467-020-17006-w
dc.identifier.doihttps://doi.org/10.1038/s41467-020-17006-w
dc.identifier.urihttps://hdl.handle.net/2152/123513
dc.identifier.urihttps://doi.org/10.26153/tsw/50309
dc.language.isoen_US
dc.publisherSpringer Nature Limited
dc.relation.ispartofCenter for Dynamics and Control of Materials Publications
dc.rights.restrictionOpen
dc.subjectdichalcogenide
dc.titleLithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers
dc.typeArticle

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