High resolution overlay alignment systems for imprint lithography

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dc.contributor.assigneeBoard of Regents, The University of Texas System
dc.creatorMatthew E. Colburn
dc.creatorTodd Bailey
dc.creatorByung J. Choi
dc.creatorS. V. Sreenivasan
dc.date.accessioned2019-10-23T19:26:23Z
dc.date.available2019-10-23T19:26:23Z
dc.date.filed2003-05-27
dc.date.issued2005-07-19
dc.description.abstractA system of determining and correcting alignment during imprint lithography process is described. During an imprint lithographic process the template may be aligned with the substrate by the use of alignment marks disposed on both the template and substrate. The alignment may be determined and corrected for before the layer is processed.
dc.description.departmentBoard of Regents, University of Texas System
dc.identifier.applicationnumber10445863
dc.identifier.patentnumber6919152
dc.identifier.urihttps://hdl.handle.net/2152/76828
dc.identifier.urihttp://dx.doi.org/10.26153/tsw/3917
dc.publisherUnited States Patent and Trademark Office
dc.relation.ispartofUniversity of Texas Patents
dc.relation.ispartofUniversity of Texas Patents
dc.rights.restrictionOpen
dc.rights.restrictionOpen
dc.subject.cpcB29C35/0888
dc.subject.cpcB29C37/0053
dc.subject.cpcB29C43/003
dc.subject.cpcB29C43/021
dc.subject.cpcB29C2035/0827
dc.subject.cpcB29C2043/025
dc.subject.cpcB82Y10/00
dc.subject.cpcB82Y40/00
dc.subject.cpcG03F7/0002
dc.subject.cpcG03F9/00
dc.subject.cpcY10S101/36
dc.subject.cpcY10T428/24802
dc.subject.uspc101/130
dc.subject.uspc101/131
dc.subject.uspc101/DIG36
dc.subject.uspc396/428
dc.subject.uspc430/30
dc.subject.uspc430/22
dc.titleHigh resolution overlay alignment systems for imprint lithography
dc.typePatent

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