Resonant Photovoltaic Effect in Doped Magnetic Semiconductors

Date

2020-02-27

Authors

Bhalla, Pankaj
MacDonald, Allan H.
Culcer, Dimitrie

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Abstract

The rectified non-linear response of a clean, time-reversal symmetric, undoped semiconductor to an ac electric field includes a well known intrinsic shift current. We show that when Kramers degeneracy is broken, a distinct second order rectified response appears due to Bloch state anomalous velocities in a system with an oscillating Fermi surface. This effect, which we refer to as the resonant photovoltaic effect (RPE), produces a resonant galvanic current peak at the interband absorption threshold in doped semiconductors or semimetals with approximate particle-hole symmetry. We evaluate the RPE for a model of the surface states of a magnetized topological insulator.

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