Novel organometallic precursors for the Chemical Vapor Deposition of metal thin films
With the growing demand for miniaturization of devices and for new materials with useful properties, the use of Chemical Vapor Deposition (CVD) for the manufacture of thin films is receiving growing attention. The synthesis of potentially volatile metal complexes and investigation of their use as CVD precursors is an important part of this process. The research presented addresses several major areas of this process, (i) the identification and synthesis of ligands which can impart volatility to a metal complex, (ii) the synthesis, characterization, and assessment of volatility of metal complexes containing these ligands, and (iii) the full materials characterization of thin films grown with these complexes. The use of trimethylphosphine, bis(trifluoromethyl)pyrazolate, and bis(trifluoromethyl)pyrrolyl ligands have been successfully used to synthesize volatile new complexes of cobalt, rhodium, and nickel, some of which show promise for use as potential CVD precursors.