An accurate and computationally-efficient model for boron implants through an overlying oxide layer into single-crystal (100) silicon

dc.contributor.advisorTasch, Al F., Jr.
dc.creatorLim, Hsuan-Yu, 1967-
dc.date.accessioned2021-12-19T01:35:54Z
dc.date.available2021-12-19T01:35:54Z
dc.date.issued1993
dc.description.abstractIn many of the current implant applications in integrated circuits, a thin overlying amorphous oxide layer is often used to reduce the depth of dopant profiles by reducing the amount of channeling. The oxide layer is believed to randomly scatter a well-collimated (≤ 0.5° divergence) ion beam into a cone-shape angular distribution prior to its entry into the underlying single-crystal silicon. In this manner, most of the ions are scattered away from major axial and planar channels. A computationally-efficient 1-D model for boron implantation into single-crystal silicon through a screen oxide layer was developed. This model is of great interest and importance to the semiconductor industry for understanding process control issues in manufacturing and for guiding technology development. In developing this model, approximately 400 SIMS experimental profiles were obtained. In addition, the UT-MARLOWE Monte Carlo ion implant code was improved to generate boron profiles for part of the implant parameter space. It has been observed that boron implanted profiles are significantly dependent on the implant dose, energy, oxide layer thickness, tilt angle and rotation angle. A curve-fitting software program that uses the Dual Pearson Distribution function was used to extract the nine parameter values which define each profile. The parameters extracted for each profile are arranged into a lookup table where each set of nine parameter values corresponds to the profile for a particular combination of implant dose, energy, tilt angle, rotation angle and oxide thickness. Linear interpolation functions are employed to generate profiles for which there are no explicit set of parameters. This computationally-efficient model is able to generate as-implanted profiles of boron implantation through thin overlying oxides ranging from bare silicon (with a native oxide of approximately I.6nm) to 40nm, implant energies ranging from 15keV to 80keV, doses up to 1x10¹⁶cm⁻², tilt angles ranging from 0°-10°, and rotation angles ranging from 0°-360°. This model is being implemented into SUPREM III, a widely used process simulation program used in the semiconductor industry in order to demonstrate the model. In this manner, the model will allow users to generate, in a highly computationally-efficient manner, accurate 1-D boron profiles as a function of implant dose, energy, oxide thickness, tilt angle and rotation angleen_US
dc.description.departmentElectrical and Computer Engineeringen_US
dc.format.mediumelectronicen_US
dc.identifier.urihttps://hdl.handle.net/2152/90860
dc.identifier.urihttp://dx.doi.org/10.26153/tsw/17779
dc.language.isoengen_US
dc.relation.ispartofUT Electronic Theses and Dissertationsen_US
dc.rightsCopyright © is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en_US
dc.rights.restrictionRestricteden_US
dc.subjectBoronen_US
dc.subjectIntegrated circuitsen_US
dc.subjectOxidesen_US
dc.subjectSilicon crystalsen_US
dc.subjectIon implantationen_US
dc.subjectThin filmsen_US
dc.subject.lcshBoron
dc.subject.lcshIntegrated circuits
dc.subject.lcshOxides
dc.subject.lcshSilicon crystals
dc.subject.lcshIon implantation
dc.subject.lcshThin films
dc.titleAn accurate and computationally-efficient model for boron implants through an overlying oxide layer into single-crystal (100) siliconen_US
dc.typeThesisen_US
dc.type.genreThesisen_US
thesis.degree.departmentElectrical and Computer Engineeringen_US
thesis.degree.disciplineElectrical Engineeringen_US
thesis.degree.grantorUniversity of Texas at Austinen_US
thesis.degree.levelMastersen_US
thesis.degree.nameMaster of Science in Engineeringen_US

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