Multistate spin-transfer-torque random access memory

dc.contributor.advisorBanerjee, Sanjay
dc.contributor.committeeMemberRegister, Leonard F
dc.creatorAsoudegi, Nima
dc.creator.orcid0000-0002-8287-8903
dc.date.accessioned2016-10-05T21:42:07Z
dc.date.available2016-10-05T21:42:07Z
dc.date.issued2016-05
dc.date.submittedMay 2016
dc.date.updated2016-10-05T21:42:07Z
dc.description.abstractSpin-transfer-torque random access memory (STT-RAM) is an emerging non-volatile memory technology that stores information as the relative alignment of two ferromagnets in a magnetic tunnel junction stack. Due to high scalability, speed and endurance STT-RAM is being considered as a promising candidate for future universal memory. To improve storage density various multi-state configurations have been proposed for STT-RAM. Previously, using micromagnetic simulations, it was shown that shape anisotropy of a cross-shaped ferromagnet can be used to achieve multi-state operation in a STT-RAM bit. In this work, we attempt to demonstrate the multi-state operation of such cross-shaped ferromagnet experimentally. We have explored different approach to fabricate cross-shaped magnetic tunnel junctions. Using magnetic force microscopy we demonstrate equilibrium magnetization states of a patterned cross-shaped ferromagnet. Challenges and future perspectives have been discussed.
dc.description.departmentElectrical and Computer Engineering
dc.format.mimetypeapplication/pdf
dc.identifierdoi:10.15781/T27940W2G
dc.identifier.urihttp://hdl.handle.net/2152/41498
dc.language.isoen
dc.subjectMultistate spin transfer torque random access memory
dc.subjectMulti-bit
dc.subjectSTTRAM
dc.subjectMRAM
dc.titleMultistate spin-transfer-torque random access memory
dc.typeThesis
dc.type.materialtext
thesis.degree.departmentElectrical and Computer Engineering
thesis.degree.disciplineElectrical and Computer engineering
thesis.degree.grantorThe University of Texas at Austin
thesis.degree.levelMasters
thesis.degree.nameMaster of Science in Engineering

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