Engineering of the interband second order optical nonlinearity using asymmetric coupled quantum wells
dc.contributor.advisor | Bank, Seth Robert | |
dc.contributor.committeeMember | Wasserman, Daniel | |
dc.creator | Ramesh, Rithvik | |
dc.creator.orcid | 0000-0001-7026-9580 | |
dc.date.accessioned | 2023-08-14T22:34:10Z | |
dc.date.available | 2023-08-14T22:34:10Z | |
dc.date.created | 2023-05 | |
dc.date.issued | 2023-04-20 | |
dc.date.submitted | May 2023 | |
dc.date.updated | 2023-08-14T22:34:11Z | |
dc.description.abstract | Developing a semiconductor platform with strong second-order optical nonlinearity can enable better integration with semiconductor photonics and improved performance compared to traditional nonlinear optical materials (i.e. LiNbO₃). In a coupled quantum well structure, the quantum well thicknesses, tunneling barrier thickness, material compositions, and other parameters can be designed to tune the second-order susceptibility, χ⁽²⁾. Utilizing interband transitions allows access to energy level transitions across the bandgap, thus enabling strong, tunable χ⁽²⁾ in the near-IR. Schrodinger-Poisson methods and density functional theory were used to calculate the second-harmonic generation χ⁽²⁾ for GaAs/AlGaAs coupled quantum well structures. By using rigorous wavefunction calculation methods and considering all possible transitions contributing to second-harmonic generation, multiple methods to enhance and tailor χ⁽²⁾ have been determined. Using coupled asymmetric GaAs/AlGaAs quantum wells and varying the quantum well thicknesses, the 50 meV off-resonant wavelength for χ⁽²⁾ can be tuned across the optical communications wavelengths between 1.5 m and 1.7 m. This work lays the foundation for designing III-V superlattices and digital alloys with enhanced second-order optical nonlinearities that can be tailored for the wavelength requirements of particular applications | |
dc.description.department | Electrical and Computer Engineering | |
dc.format.mimetype | application/pdf | |
dc.identifier.uri | https://hdl.handle.net/2152/121141 | |
dc.identifier.uri | http://dx.doi.org/10.26153/tsw/47971 | |
dc.language.iso | en | |
dc.subject | Nonlinear optics | |
dc.subject | Semiconductor bandgap engineering | |
dc.title | Engineering of the interband second order optical nonlinearity using asymmetric coupled quantum wells | |
dc.type | Thesis | |
dc.type.material | text | |
thesis.degree.department | Electrical and Computer Engineering | |
thesis.degree.discipline | Electrical and Computer Engineering | |
thesis.degree.grantor | The University of Texas at Austin | |
thesis.degree.level | Masters | |
thesis.degree.name | Master of Science in Engineering |
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