Direct growth of MoS 2 on electrolytic substrate and realization of high-mobility transistors
| dc.creator | Alam, Md Hasibul | |
| dc.creator | Chowdhury, Sayema | |
| dc.creator | Roy, Anupam | |
| dc.creator | Braga, Maria Helena | |
| dc.creator | Banerjee, Sanjay K. | |
| dc.creator | Akinwande, Deji | |
| dc.date.accessioned | 2024-02-06T16:57:40Z | |
| dc.date.available | 2024-02-06T16:57:40Z | |
| dc.date.issued | 2021-05-17 | |
| dc.description.abstract | Although electrostatic gating with liquid electrolytes has been thoroughly investigated to enhance electrical transport in two-dimensional (2D) materials, solid electrolyte alternatives are now actively being researched to overcome the limitations of liquid dielectrics. Here, we report direct growth of few-layer (3-4 L) molybdenum disulfide (MoS2), a prototypical 2D transition metal dichalcogenide (TMD), on lithium-ion solid electrolyte substrate by chemical vapor deposition (CVD), and demonstrate a transfer-free device fabrication method. The growth resulted in 5-10 µm sized triangular MoS2 single-crystals as confirmed by Raman spectroscopy, X-ray photoelectron spectroscopy, and scanning electron microscopy. Field-effect transistors (FETs) fabricated on the as-grown few-layer crystals show near-ideal gating performance with room temperature subthreshold swings around 65 mV/dec while maintaining an ON/OFF ratio around 10 5. Field-effect mobility in the range of 42-49 cm2V-1s-1 and current densities as high as 120 µA/µm with 0.5 µm channel length has been achieved, back-gated by the solid electrolyte. This is the highest reported mobility among comparable FETs on as-grown single/few-layer CVD MoS2. This growth and transfer-free device fabrication method on solid electrolyte substrates can be applied to other 2D TMDs for studying advanced thin-film transistors, interesting physics, and is amenable to diverse surface science experiments, otherwise difficult to realize with liquid electrolytes. | |
| dc.description.department | Center for Dynamics and Control of Materials | |
| dc.description.sponsorship | D.A. acknowledges the PECASE award from the Army Research Office (ARO) grant #W911NF-16-1-0277, and the National Science Foundation (NSF) MRSEC Center (DMR- 1720595). S.K.B. acknowledges support from ARO grant #W911NF-17-1-0312 (MURI), and the NSF NASCENT ERC. The work was partly done at the Texas Nanofabrication Facility supported by NSF grant #NNCI-1542159. | |
| dc.identifier.doi | DOI: 10.1103/PhysRevMaterials.5.054003 | |
| dc.identifier.uri | https://hdl.handle.net/2152/123591 | |
| dc.identifier.uri | https://doi.org/10.26153/tsw/50385 | |
| dc.language.iso | en_US | |
| dc.relation.ispartof | Center for Dynamics and Control of Materials Publications | |
| dc.rights.restriction | Open | |
| dc.subject | transistors | |
| dc.title | Direct growth of MoS 2 on electrolytic substrate and realization of high-mobility transistors | |
| dc.type | Article |