Temperature Dependence Of The Electrical Resistivity Of LaxLu1-xAs

Rahimi, S.
Krivoy, E. M.
Lee, J.
Michael, M. E.
Bank, S. R.
Akinwande, D.
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We investigate the temperature-dependent resistivity of single-crystalline films of LaxLu1-xAs over the 5-300 K range. The resistivity was separated into lattice, carrier and impurity scattering regions. The effect of impurity scattering is significant below 20 K, while carrier scattering dominates at 20-80 K and lattice scattering dominates above 80 K. All scattering regions show strong dependence on the La content of the films. While the resistivity of 600 nm LuAs films agree well with the reported bulk resistivity values, 3 nm films possessed significantly higher resistivity, suggesting that interfacial roughness significantly impacts the scattering of carriers at the nanoscale limit. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

S. Rahimi, E. M. Krivoy, J. Lee, M. E. Michael, S. R. Bank, and D. Akinwande. AIP Advances 3, 082102 (Aug., 2013). DOI: 10.1063/1.4817830