Research and development of high voltage SiC bipolar junction transistor

dc.contributor.advisorHuang, Alex Q.
dc.contributor.committeeMemberLi, Xiuling
dc.contributor.committeeMemberAgarwal, Anant
dc.contributor.committeeMemberDodabalapur, Ananth
dc.contributor.committeeMemberBanerjee, Sanjay K.
dc.creatorLuo, Xixi
dc.date.accessioned2024-05-07T23:19:18Z
dc.date.available2024-05-07T23:19:18Z
dc.date.issued2023-12
dc.date.submittedDecember 2023
dc.date.updated2024-05-07T23:19:19Z
dc.description.abstractIn this Dissertation, a 3kV level 4H-SiC Bipolar Junction Transistor (BJT) was designed, simulated, fabricated, and characterized. The epi layers were selected with a theoretical vertical breakdown voltage of about 4.1kV, which was verified both by hand calculation and Sentaurus TCAD simulation. With a four step Junction Termination Extension (JTE) structure with total width longer than 40μm, the BJT simulated and measured collector-base breakdown voltage and collector-emitter breakdown voltage were both higher than 3kV. The BJT base layer was designed to be as thin and lightly doped as possible to guarantee the current gain, giving a record light base charge density of 1.2×10¹³cm⁻². According to measurement results, the current gain of the BJT was dependent mostly on the minority carrier lifetime. Therefore, the minority carrier lifetime enhancement process was conducted and studied. Different cell geometries of BJTs were fabricated, with variations include circular/finger device, finger length, finger width and finger numbers. Among all available devices, a minimal specific on-resistance of about 6.7mΩ*cm² was achieved, which was smaller than the calculated epi resistance and indicated the existence of conduction modulation. With help of TCAD simulation, the impact of cell geometries on BJT conduction performances was summarized.
dc.description.departmentElectrical and Computer Engineering
dc.format.mimetypeapplication/pdf
dc.identifier.uri
dc.identifier.urihttps://hdl.handle.net/2152/125035
dc.identifier.urihttps://doi.org/10.26153/tsw/51627
dc.language.isoen
dc.subjectPower semiconductor
dc.subjectBJT
dc.subjectBreakdown voltage
dc.subjectTCAD
dc.subjectJTE
dc.subject4H-SiC
dc.titleResearch and development of high voltage SiC bipolar junction transistor
dc.typeThesis
dc.type.materialtext
thesis.degree.departmentElectrical and Computer Engineering
thesis.degree.grantorThe University of Texas at Austin
thesis.degree.nameDoctor of Philosophy

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