Ultra thin dielectric for electronic devices and method of making same
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Date
1996-11-26
Authors
Dim-Lee Lee Kwong
Jong Han Kim
Giwan Yoon
Liang-Kai Han
Jiang Yan
Journal Title
Journal ISSN
Volume Title
Publisher
United States Patent and Trademark Office
Abstract
High quality, ultra thin SiO.sub.2 /Si.sub.3 N.sub.4 (ON) dielectric layers have been fabricated by in situ multiprocessing and low pressure rapid-thermal N.sub.2 O-reoxidation (LRTNO) of Si.sub.3 N.sub.4 films. Si.sub.3 N.sub.4 film was deposited on the RTN-treated polysilicon by rapid-thermal chemical vapor deposition (RT-CVD) using SiH.sub.4 and NH.sub.3, followed by in situ low pressure rapid-thermal reoxidation in N.sub.2 O (LRTNO) or in O.sub.2 (LRTO) ambient. Results show that ultra thin (T.sub.ox,eq =.about.29 .ANG.) ON stacked film capacitors with LRTNO have excellent electrical properties, and reliability.