Confined monolayer Ag as a large gap 2D semiconductor and its momentum resolved excited states

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dc.creatorLee, Woojoo
dc.creatorWang, Yuanxi
dc.creatorQin, Wei
dc.creatorKim, Hyunsue
dc.creatorLiu, Mengke
dc.creatorNunley, T. Nathan
dc.creatorFang, Bin
dc.creatorManiyara, Rinu
dc.creatorDong, Chengye
dc.creatorRobinson, Joshua A.
dc.creatorCrespi, Vincent
dc.creatorLi, Xiaoqin
dc.creatorMacDonald, Allan H.
dc.creatorShih, Chih-Kang
dc.date.accessioned2024-02-15T19:40:24Z
dc.date.available2024-02-15T19:40:24Z
dc.date.issued2022-09-20
dc.description.abstract2D materials have intriguing quantum phenomena that are distinctively different from their bulk counterparts. Recently, epitaxially synthesized wafer-scale 2D metals, composed of elemental atoms, are attracting attention not only for their potential applications but also for exotic quantum effects such as superconductivity. By mapping momentum-resolved electronic states using time-resolved and angle-resolved photoemission spectroscopy (ARPES), we reveal that monolayer Ag confined between bilayer graphene and SiC is a large gap (> 1 eV) 2D semiconductor, consistent with GW-corrected density functional theory. The measured valence band dispersion matches the DFT-GW quasiparticle band. However, the conduction band dispersion shows an anomalously large effective mass of 2.4 m0. Possible mechanisms for this large enhancement in the “apparent mass” are discussed.
dc.description.departmentCenter for Dynamics and Control of Materials
dc.description.sponsorshipThis work was primarily supported by the National Science Foundation through the Center for Dynamics and Control of Materials: an NSF MRSEC under Cooperative Agreement No. DMR- 1720595. Other supports include NSF Grant Nos. DMR-1808751, and the Welch Foundation F- 1672. Support for synthesis comes from The Penn State Center for Nanoscale Science (NSF Grant DMR-2011839) and the Penn State 2DCC-MIP (NSF DMR-1539916).
dc.identifier.doi10.1021/acs.nanolett.2c02501
dc.identifier.urihttps://hdl.handle.net/2152/123687
dc.identifier.urihttps://doi.org/10.26153/tsw/50481
dc.language.isoen_US
dc.relation.ispartofCenter for Dynamics and Control of Materials Publications
dc.rights.restrictionOpen
dc.subjectsemiconductor
dc.titleConfined monolayer Ag as a large gap 2D semiconductor and its momentum resolved excited states
dc.typeArticle

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