Photoresist compositions comprising norbornene derivative polymers with acid labile groups

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Date

2000-08-15

Authors

Willson, C. Grant
Okoroanyanwu, Uzodinma
Medieros, David

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United States Patent and Trademark Office

Abstract

Provided herein are photoresist compositions for use particularly in 193 nm lithography. These compositions generally comprise a polymer of norbornene and a photo acid generator. The disclosed compositions provide transparency at wavelengths of approximately 190-200 nm, combined with high etch resistance. The polymers also provide hydrophilicity for good positive-tone development characteristics and high glass transition temperatures. Also disclosed is a process for microfabrication utilizing the claimed compositions. A further aspect of the invention is a plasticizer comprising 4,8-di-t-butyl-tricyclo(5.2.1.0.sup.2,6)decanedicarboxylate.

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