Anisotropic Magnetoresistance in Antiferromagnetic Sr2IrO4

dc.contributor.utaustinauthorWang, C.en_US
dc.contributor.utaustinauthorSeinige, H.en_US
dc.contributor.utaustinauthorZhou, JSen_US
dc.contributor.utaustinauthorGoodenough, J. B.en_US
dc.contributor.utaustinauthorTsoi, M.en_US
dc.creatorWang, C.en_US
dc.creatorSeinige, H.en_US
dc.creatorCao, G.en_US
dc.creatorZhou, J. S.en_US
dc.creatorGoodenough, J. B.en_US
dc.creatorTsoi, M.en_US
dc.date.accessioned2017-07-18T20:10:19Z
dc.date.available2017-07-18T20:10:19Z
dc.date.issued2014-11en_US
dc.description.abstractWe report point-contact measurements of anisotropic magnetoresistance (AMR) in a single crystal of antiferromagnetic Mott insulator Sr2IrO4. The point-contact technique is used here as a local probe of magnetotransport properties on the nanoscale. The measurements at liquid nitrogen temperature reveal negative magnetoresistances (up to 28%) for modest magnetic fields (250 mT) applied within the IrO2 a-b plane and electric currents flowing perpendicular to the plane. The angular dependence of magnetoresistance shows a crossover from fourfold to twofold symmetry in response to an increasing magnetic field with angular variations in resistance from 1% to 14%. We tentatively attribute the fourfold symmetry to the crystalline component of AMR and the field-induced transition to the effects of applied field on the canting of antiferromagnetic-coupled moments in Sr2IrO4. The observed AMR is very large compared to the crystalline AMRs in 3d transition metal alloys or oxides (0.1%-0.5%) and can be associated with the large spin-orbit interactions in this 5d oxide while the transition provides evidence of correlations between electronic transport, magnetic order, and orbital states. The finding of this work opens an entirely new avenue to not only gain a new insight into physics associated with spin-orbit coupling but also to better harness the power of spintronics in a more technically favorable fashion.en_US
dc.description.departmentPhysicsen_US
dc.description.sponsorshipC-SPINen_US
dc.description.sponsorshipSTARneten_US
dc.description.sponsorshipSemiconductor Research Corporation programen_US
dc.description.sponsorshipMARCOen_US
dc.description.sponsorshipDARPAen_US
dc.description.sponsorshipNSF DMR-1207577 DMR-1122603 DMR-1265162en_US
dc.identifierdoi:10.15781/T2CF9JN7W
dc.identifier.citationWang, Cheng, Heidi Seinige, Gang Cao, J-S. Zhou, John B. Goodenough, and Maxim Tsoi. "Anisotropic magnetoresistance in antiferromagnetic Sr 2 IrO 4." Physical Review X 4, no. 4 (2014): 041034.en_US
dc.identifier.doi10.1103/PhysRevX.4.041034en_US
dc.identifier.issn2160-3308en_US
dc.identifier.urihttp://hdl.handle.net/2152/61121
dc.language.isoEnglishen_US
dc.relation.ispartofUT Faculty/Researcher Worksen_US
dc.relation.ispartofserialPhysical Review Xen_US
dc.rightsAdministrative deposit of works to Texas ScholarWorks: This works author(s) is or was a University faculty member, student or staff member; this article is already available through open access or the publisher allows a PDF version of the article to be freely posted online. The library makes the deposit as a matter of fair use (for scholarly, educational, and research purposes), and to preserve the work and further secure public access to the works of the University.en_US
dc.rights.restrictionopenen_US
dc.subjectphaseen_US
dc.subjectmetalen_US
dc.titleAnisotropic Magnetoresistance in Antiferromagnetic Sr2IrO4en_US
dc.typeArticleen_US

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