Method for fabricating magnetic solid state devices

dc.contributor.assigneeBoard of Regents, The University of Texas System
dc.creatorBahniman Ghosh
dc.creatorRik Dey
dc.creatorSanjay K. Banerjee
dc.creatorLeonard Franklin Register, II
dc.date.accessioned2019-10-23T14:07:00Z
dc.date.available2019-10-23T14:07:00Z
dc.date.filed2017-05-08
dc.date.issued2018-11-06
dc.description.abstractA magnetic solid state device is disclosed. The magnetic solid state device includes a substrate and a topological insulator deposited on top of the substrate. The magnetic solid state device also includes a first perpendicular magnetic anisotropy (PMA) bit having a reference PMA layer located on the topological insulator, and a second PMA bit having a free PMA layer located on the topological insulator. A gate contact is utilized to receive various predetermined voltages for controlling the Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions between the reference PMA layer in the first PMA bit and the free PMA layer in the second PMA bit.
dc.description.departmentBoard of Regents, University of Texas System
dc.identifier.applicationnumber15589626
dc.identifier.patentnumber10121962
dc.identifier.urihttps://hdl.handle.net/2152/76522
dc.identifier.urihttp://dx.doi.org/10.26153/tsw/3611
dc.publisherUnited States Patent and Trademark Office
dc.relation.ispartofUniversity of Texas Patents
dc.relation.ispartofUniversity of Texas Patents
dc.rights.restrictionOpen
dc.rights.restrictionOpen
dc.subject.cpcH01L43/10
dc.subject.cpcH01L27/222
dc.subject.cpcH01L43/02
dc.subject.cpcH01L43/12
dc.titleMethod for fabricating magnetic solid state devices
dc.typePatent
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