Optoelectric memories with photoconductive thin films

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Date

1995-06-13

Authors

Allen J. Bard
Marye A. Fox
Chong-Yang Liu
Horng-long Pan

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United States Patent and Trademark Office

Abstract

Methods and apparatii are described for information storage in photoconductive film of single layer composition by irradiation of memory elements simultaneously with application of an electric field. Information is stored as trapped charge accumulations in the film when the irradiation is removed, but trapped charge can be released by subsequent irradiation. Repeated information storage, followed by erasure, returns the films to their original state without degradation.

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