Method of making an ultra thin dielectric for electronic devices

dc.contributor.assigneeRegents of the University of Texas System
dc.creatorDim-Lee Lee Kwong
dc.creatorJong Han Kim
dc.creatorGiwan Yoon
dc.creatorLiang-Kai Han
dc.creatorJiang Yan
dc.date.accessioned2019-10-23T19:24:14Z
dc.date.available2019-10-23T19:24:14Z
dc.date.filed1994-05-04
dc.date.issued1995-12-26
dc.description.abstractHigh quality, ultra thin (<30 .ANG.) SiO.sub.2 /Si.sub.3 N.sub.4 (ON) dielectric layers have been fabricated by in situ multiprocessing and low pressure rapid-thermal N.sub.2 O-reoxidation (LRTNO) of Si.sub.3 N.sub.4 films. Si.sub.3 N.sub.4 film was deposited on the RTN-treated polysilicon by rapid-thermal chemical vapor deposition (RT-CVD) using SiH.sub.4 and NH.sub.3, followed by in situ low pressure rapid-thermal reoxidation in N.sub.2 O (LRTNO) or in O.sub.2 (LRTO) ambient. Results show that ultra thin (T.sub.ox,eq =.about.29.ANG.) ON stacked film capacitors with LRTNO have excellent electrical properties and reliability.
dc.description.departmentBoard of Regents, University of Texas System
dc.identifier.applicationnumber8237745
dc.identifier.patentnumber5478765
dc.identifier.urihttps://hdl.handle.net/2152/76774
dc.identifier.urihttp://dx.doi.org/10.26153/tsw/3863
dc.publisherUnited States Patent and Trademark Office
dc.relation.ispartofUniversity of Texas Patents
dc.relation.ispartofUniversity of Texas Patents
dc.rights.restrictionOpen
dc.rights.restrictionOpen
dc.subject.cpcH01L21/02326
dc.subject.cpcH01L21/02164
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dc.subject.uspc438/762
dc.subject.uspc438/954
dc.titleMethod of making an ultra thin dielectric for electronic devices
dc.typePatent
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