Method of making an ultra thin dielectric for electronic devices

Access full-text files

Date

1995-12-26

Authors

Dim-Lee Lee Kwong
Jong Han Kim
Giwan Yoon
Liang-Kai Han
Jiang Yan

Journal Title

Journal ISSN

Volume Title

Publisher

United States Patent and Trademark Office

Abstract

High quality, ultra thin (<30 .ANG.) SiO.sub.2 /Si.sub.3 N.sub.4 (ON) dielectric layers have been fabricated by in situ multiprocessing and low pressure rapid-thermal N.sub.2 O-reoxidation (LRTNO) of Si.sub.3 N.sub.4 films. Si.sub.3 N.sub.4 film was deposited on the RTN-treated polysilicon by rapid-thermal chemical vapor deposition (RT-CVD) using SiH.sub.4 and NH.sub.3, followed by in situ low pressure rapid-thermal reoxidation in N.sub.2 O (LRTNO) or in O.sub.2 (LRTO) ambient. Results show that ultra thin (T.sub.ox,eq =.about.29.ANG.) ON stacked film capacitors with LRTNO have excellent electrical properties and reliability.

Description

Keywords

LCSH Subject Headings

Citation