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dc.contributor.advisorBanerjee, Sanjay
dc.creatorJoshi, Sachin Vineet
dc.date.accessioned2019-12-02T23:33:14Z
dc.date.available2019-12-02T23:33:14Z
dc.date.issued2004-08-16
dc.identifier.urihttps://hdl.handle.net/2152/78624
dc.identifier.urihttp://dx.doi.org/10.26153/tsw/5680
dc.description.abstractAs conventional scaling approaches its limits, novel materials are increasingly being explored for continuing the exponential growth predicted by Moore's law. Germanium and high K gate dielectrics are currently the subject of extensive study. This work is an initial report about the challenges and opportunities in the integration of compressively strained Germanium films and high k gate dielectrics onto conventional silicon substrates for faster MOS devices. A novel MOS device structure with a thin, meta-stable Ge film in the channel region and a high k gate dielectric material is explored for its thermodynamic instability.en_US
dc.format.mediumelectronicen_US
dc.language.isoengen_US
dc.relation.ispartofUT Electronic Theses and Dissertationsen_US
dc.rightsCopyright © is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en_US
dc.subjectGermanium filmen_US
dc.subjectMOS devicesen_US
dc.subjectThermal stabilityen_US
dc.titleProcessing issues of Germanium MOS devices on silicon substratesen_US
dc.typeThesisen_US
dc.description.departmentElectrical and Computer Engineeringen_US
dc.type.genreThesisen_US
thesis.degree.departmentElectrical and Computer Engineeringen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
thesis.degree.grantorUniversity of Texas at Austinen_US
thesis.degree.levelMastersen_US
thesis.degree.nameMaster of Science in Engineering.en_US
dc.rights.restrictionRestricteden_US


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