Processing issues of Germanium MOS devices on silicon substrates
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As conventional scaling approaches its limits, novel materials are increasingly being explored for continuing the exponential growth predicted by Moore's law. Germanium and high K gate dielectrics are currently the subject of extensive study. This work is an initial report about the challenges and opportunities in the integration of compressively strained Germanium films and high k gate dielectrics onto conventional silicon substrates for faster MOS devices. A novel MOS device structure with a thin, meta-stable Ge film in the channel region and a high k gate dielectric material is explored for its thermodynamic instability.