Growth of polycrystalline CaF.sub.2 via low temperature OMCVD
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Date
1991-06-25
Authors
Al F. Tasch, Jr.
Richard A. Jones
Alan H. Cowley
Journal Title
Journal ISSN
Volume Title
Publisher
United States Patent and Trademark Office
Abstract
The present invention involves the use of organocalcium precursors for the chemical vapor deposition of thin CaF.sub.2 films under exceptionally mild conditions. This method is based on utilizing an organocalcium compound and a source of fluorine in a chemical vapor deposition reaction to form CaF.sub.2.