Avalanche photodiodes with an impact-ionization-engineered multiplication region
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Date
2006-05-16
Authors
Joe C. Campbell
Ping Yuan
Journal Title
Journal ISSN
Volume Title
Publisher
United States Patent and Trademark Office
Abstract
An avalanche photodiode including a multiplication layer is provided. The multiplication layer may include a well region and a barrier region. The well region may include a material having a higher carrier ionization probability than a material used to form the barrier region.