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dc.creatorSidlgata V. Sreenivasan
dc.creatorMatthew E. Colburn
dc.creatorTodd Bailey
dc.creatorByung J. Choi
dc.date.accessioned2019-10-23T19:26:23Z
dc.date.available2019-10-23T19:26:23Z
dc.date.issued2005-07-26
dc.identifier.urihttps://hdl.handle.net/2152/76829
dc.identifier.urihttp://dx.doi.org/10.26153/tsw/3918
dc.description.abstractA method of determining and correcting alignment during imprint lithography process is described. During an imprint lithographic process the template may be aligned with the substrate by the use of alignment marks disposed on both the template and substrate. The alignment may be determined and corrected for before the layer is processed.
dc.publisherUnited States Patent and Trademark Office
dc.relation.ispartofUniversity of Texas Patents
dc.relation.ispartofUniversity of Texas Patents
dc.titleHigh-resolution overlay alignment methods for imprint lithography
dc.typePatent
dc.description.departmentBoard of Regents, University of Texas System
dc.rights.restrictionOpen
dc.rights.restrictionOpen
dc.contributor.assigneeBoard of Regents, The University of Texas System
dc.date.filed2001-07-16
dc.subject.cpcB29C35/0888
dc.subject.cpcB29C37/0053
dc.subject.cpcB29C43/003
dc.subject.cpcB29C43/021
dc.subject.cpcB29C2035/0827
dc.subject.cpcB29C2043/025
dc.subject.cpcB82Y10/00
dc.subject.cpcB82Y40/00
dc.subject.cpcG03F7/0002
dc.subject.cpcG03F9/00
dc.subject.cpcY10S101/36
dc.subject.cpcY10T428/24802
dc.identifier.patentnumber6921615
dc.identifier.applicationnumber9907512
dc.subject.uspc430/22
dc.subject.uspc430/30
dc.subject.uspc430/322


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