Low bandgap polymers from fused dithiophene diester
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Date
1996-04-23
Authors
John P. Ferraris
Tim L. Lambert
Santiago Rodriguez
Journal Title
Journal ISSN
Volume Title
Publisher
United States Patent and Trademark Office
Abstract
The present invention involves monomeric compounds having the structure: ##STR1## Substituents W and Z are independently --CN, --NO.sub.2, -aryl, -aryl-V, --COX, SO.sub.2 R, --H, or -alkyl. Substituent X is --OR, or --NR,R where R and R.sup.1 are independently -alkyl or --H. Substituent V is -halide, --NO.sub.2, --CN, --SO.sub.2 R, or --COX. At least one of W and Z is --NO.sub.2, --SO.sub.2 R, --CN, --COX or -aryl-V. In one preferred embodiment substituents W and Z are both --CN. In another preferred embodiment, substituent X is --NO.sub.2 or --CN and substituent Z is --C.sub.6 H.sub.4 NO.sub.2. These monomers are polymerized to form low bandgap polymers.