Integration of monolayer graphene with a semiconductor device
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Date
2019-01-08
Authors
Deji Akinwande
Seyedeh Mortazavi Zanjani
Mir Mohammad Sadeghi
Milo Holt
Journal Title
Journal ISSN
Volume Title
Publisher
United States Patent and Trademark Office
Abstract
The integration of monolayer graphene with a semiconductor device for gas sensing applications involves obtaining a CMOS device that is prepared to receive monolayer graphene channels. After population of the monolayer graphene channels on the CMOS device, electrical contacts are formed at each end of the monolayer graphene channels with interconnect vias having sidewalls angled at less then 90°. Additional metallization pads are added at the location of the monolayer graphene channels to improve planarity and reliability of the semiconductor processing involved.