Random copolymer top coats are described that can be spin coated onto block copolymer thin films and used to control the interfacial energy of the top coat-block copolymer interface. The top coats are soluble in aqueous ...

The present invention generally relates to stimuli-responsive drug carriers and methods for making. More specifically, the present invention relates to stimuli-responsive lidded particles that respond to a physiological ...

The present invention includes a diblock copolymer system that self-assembles at very low molecular weights to form very small features. In one embodiment, one polymer in the block copolymer contains silicon, and the other ...

The use of self-assembled block copolymer structures to produce advanced lithographic patterns relies on control of the orientation of these structures in thin films. In particular, orientation of cylinders and lamellae ...

Nanorod and nanowire compositions are disclosed comprising copper indium selenide, copper indium gallium selenide, copper indium sulfide, or a combination thereof. Also disclosed are photovoltaic devices comprising the ...

A diblock copolymer system that self-assembles at very low molecular weights to form very small features is described. One polymer in the block copolymer contains silicon, and the other polymer is a polylactide. The block ...

An inkjet-based process for programmable deposition of thin films of a user-defined profile. Drops of a pre-cursor liquid organic material are dispensed at various locations on a substrate by a multi-jet. A superstrate is ...

Disclosed herein is an automatic fluid dispensing method and system for dispensing fluid on the surface of a plate-like material, or substrate, including a semiconductor wafer for imprint lithography processes. The dispensing ...

An inkjet-based process for programmable deposition of thin films of a user-defined profile. Drops of a pre-cursor liquid organic material are dispensed at various locations on a substrate by a multi-jet. A superstrate ...

A vertical III-V nanowire Field-Effect Transistor (FET). The FET includes multiple nanowires or nanopillars directly connected to a drain contact, where each of the nanopillars includes a channel of undoped III-V semiconductor ...