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UT Electronic Theses and Dissertations
UT Electronic Theses and Dissertations
Microstructural changes in MBE growth of LT-GaAs observed by in- situ ellipsometry
Microstructural changes in MBE growth of LT-GaAs observed by in- situ ellipsometry
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9534780nv.pdf
(3.17 MB)
Date
1995-05
Authors
Eyink, Kurt G. (Kurt Gerard), 1960-
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract
Department
Materials Science and Engineering
Description
Keywords
LCSH Subject Headings
Molecular beam epitaxy
,
Gallium arsenide semiconductors
,
Materials at low temperatures
,
Ellipsometry
Citation
URI
https://hdl.handle.net/2152/73828
http://dx.doi.org/10.26153/tsw/960
Collections
UT Electronic Theses and Dissertations
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