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dc.creatorCrocker, James E.
dc.creatorJakubenas, Kevin J.
dc.creatorHarrison, Shay
dc.creatorShaw, Leon L.
dc.creatorMarcus, Harris L.
dc.date.accessioned2018-12-05T20:45:21Z
dc.date.available2018-12-05T20:45:21Z
dc.date.issued1997
dc.identifierdoi:10.15781/T2GM8283H
dc.identifier.urihttp://hdl.handle.net/2152/71419
dc.description.abstractSelective Area Laser Deposition Vapor Infiltration (SALDVI) ofsilicon carbide powder infiltrated with silicon carbide deposited from tetramethylsilane (TMS) was studied. The effects of deposition time, temperature, and gas precursor pressure are discussed. The discussion centers on the efforts to properly balance these parameters to produce multi-layered shapes with structural integrity, particularly for use as the matrix material for shapes containing embedded devices. This includes optimizing scan speed, deposition temperature, and gas pressure to maximize infiltration to increase density and layer to layer bonding, and minimize excessive deposition to maintain critical dimensions. Initial powder properties are also optimized to minimize bulk motion in the powder bed during deposition, which was observed and identified as a mechanism that reduces inter-layer bonding.en_US
dc.language.isoengen_US
dc.relation.ispartof1997 International Solid Freeform Fabrication Symposiumen_US
dc.subjectSALDVIen_US
dc.subjectlaser beamen_US
dc.titleSALDVI Optimization for the Tetramethylsilane - Silicon Carbide Systemen_US
dc.typeConference paperen_US
dc.description.departmentMechanical Engineeringen_US
dc.rights.restrictionOpenen_US


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