SALDVI Optimization for the Tetramethylsilane - Silicon Carbide System
Abstract
Selective Area Laser Deposition Vapor Infiltration (SALDVI) ofsilicon carbide powder
infiltrated with silicon carbide deposited from tetramethylsilane (TMS) was studied. The effects
of deposition time, temperature, and gas precursor pressure are discussed. The discussion
centers on the efforts to properly balance these parameters to produce multi-layered shapes with
structural integrity, particularly for use as the matrix material for shapes containing embedded
devices. This includes optimizing scan speed, deposition temperature, and gas pressure to
maximize infiltration to increase density and layer to layer bonding, and minimize excessive
deposition to maintain critical dimensions. Initial powder properties are also optimized to
minimize bulk motion in the powder bed during deposition, which was observed and identified
as a mechanism that reduces inter-layer bonding.