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dc.contributor.advisorBanerjee, Sanjay
dc.contributor.advisorShahrjerdi, Davood
dc.creatorHsieh, Cheng Chih
dc.date.accessioned2017-12-18T15:31:17Z
dc.date.available2017-12-18T15:31:17Z
dc.date.created2017-08
dc.date.submittedAugust 2017
dc.identifierdoi:10.15781/T2HX16701
dc.identifier.urihttp://hdl.handle.net/2152/63012
dc.description.abstractResistive Random Access Memory (RRAM) is an emerging technology of non-volatile memory (NVM). Although the observation of metal oxide that can undergo an abrupt insulator-metal transition into a conductive state has been known for over 40 years, researchers started investigating those materials for memory applications in late 1990s. It has been considered as the next generation memory technology to replace current flash memory because RRAM has demonstrated feasible switching characteristics and potential to build high density arrays and also RRAM is also compatible with contemporary CMOS processes, which means RRAM can be integrated into current CMOS chips. While the structure of RRAM is a simple metal-insulator-metal (MIM) device, there are numerous materials that exhibit resistive switching. The switching behavior is not only dependent on the switching layer materials but also dependent on the choice of metal electrodes and their interfacial properties. Many metal oxides such as hafnium oxide, titanium oxide, aluminum oxide, nickel oxide (NiO), tantalum oxide and etc. have been studied in details; however, some materials are unexplored such as cerium oxide. In addition to nonvolatile storage applications, RRAM is considered as one of essential elements for advancing neuromorphic computing because of its analog switching and retention characteristics. This thesis investigated CeO[subscript x]-based RRAMs, from its fundamental device characteristics to neuromorphic applications.
dc.format.mimetypeapplication/pdf
dc.language.isoen
dc.subjectNon-volatile memory
dc.subjectNeuromorphic computing
dc.subjectDeep learning
dc.subjectMachine learning
dc.subjectMemory
dc.titleCerium oxide based resistive random access memory devices
dc.typeThesis
dc.date.updated2017-12-18T15:31:17Z
dc.contributor.committeeMemberLee, Jack
dc.contributor.committeeMemberYu, Edward
dc.contributor.committeeMemberGibson, Gary
dc.description.departmentElectrical and Computer Engineering
thesis.degree.departmentElectrical and Computer Engineering
thesis.degree.disciplineElectrical and Computer Engineering
thesis.degree.grantorThe University of Texas at Austin
thesis.degree.levelDoctoral
thesis.degree.nameDoctor of Philosophy
dc.type.materialtext


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