Fabrication of short channel fully printed transistors using chemical gapping techniques with demonstrated switching at 18 GHz
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This thesis reports a 100% inkjet printed transistor with a short channel of approximately 1 µm operating at up to 18.21 GHz. The small gap size is achieved through the use of silver inks with different chemical properties to prevent mixing. Semiconducting single walled carbon nanotubes were printed using deposition methodologies for the semiconducting layer. The combination of the short channel and CNT based semiconductors allows for an exceptional experimentally measured on/off ratio of 106. This all inkjet printed transistor potentially allows for the fabrication of devices using roll-to-roll methodologies with no pre or post processing.