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    Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory

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    2015_02_Stabilization.pdf (1.226Mb)
    Date
    2015-02
    Author
    Zhou, Fei
    Chang, Yao-Feng
    Fowler, Burt
    Byun, Kwangsub
    Lee, Jack C.
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    Abstract
    Using current-sweep measurements, the set process in SiOx-based resistive random access memory (RRAM) has been found to consist of multiple resistance-reduction steps. Variation in set behaviors was observed and attributed to different defect distributions in the resistance switching region. Physical mechanism of electroforming process is discussed, which further explains the observed variation of defect distributions. A compliance current study confirms that the achievable memory states of SiOx RRAM are determined by its set behavior. This finding provides additional insight on achieving multi-bit memory storage with SiOx RRAM. (C) 2015 AIP Publishing LLC.
    Department
    Microelectronics Research Center
    Subject
    physics, applied
    URI
    http://hdl.handle.net/2152/31049
    Citation
    Zhou, Fei, Chang, Yao-Feng, Fowler, Burt, Byun, Kwangsub, Lee, Jack C., >Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory,> Appl. Phys. Lett. 106, 063508 (2015). doi: 10.1063/1.4909533.
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