Show simple item record

dc.creatorCheng, Y. D.en
dc.creatorGamba, I. M.en
dc.creatorMajorana, A.en
dc.creatorShu, C. W.en
dc.date.accessioned2015-04-16T14:47:58Zen
dc.date.available2015-04-16T14:47:58Zen
dc.date.issued2011-07en
dc.identifier.citationYingda Cheng, Irene M. Gamba, Armando Majorana, Chi‐Wang Shu. AIP Conference Proceedings 1333, 890 (Jul., 2011); doi: 10.1063/1.3562758en
dc.identifier.issn0094-243Xen
dc.identifier.issn978-0-7354-0889-0en
dc.identifier.urihttp://hdl.handle.net/2152/29447en
dc.description.abstractWe are interested in the deterministic computation of the transients for the Boltzmann-Poisson system describing electron transport in semiconductor devices. The main difficulty of such computation arises from the very high dimensions of the model, making it necessary to use relatively coarse meshes and hence requiring the numerical solver to be stable and to have good resolution under coarse meshes. In this paper we consider the discontinuous Galerkin (DG) method, which is a finite element method using discontinuous piecewise polynomials as basis functions and numerical fluxes based on upwinding for stability, for solving the Boltzmann-Poisson system. In many situations, the deterministic DG solver can produce accurate solutions with equal or less CPU time than the traditional DSMC (Direct Simulation Monte Carlo) solvers. Numerical simulation results on a diode and a 2D double-gate MOSFET are given.en
dc.language.isoEnglishen
dc.rightsAdministrative deposit of works to UT Digital Repository: This works author(s) is or was a University faculty member, student or staff member; this article is already available through open access or the publisher allows a PDF version of the article to be freely posted online. The library makes the deposit as a matter of fair use (for scholarly, educational, and research purposes), and to preserve the work and further secure public access to the works of the University.en
dc.subjectsemiconductor device simulationen
dc.subjectboltzmann-poissonen
dc.subjectdiscontinuousen
dc.subjectgalerkinen
dc.subjectmonte-carlo methodsen
dc.subjectequationen
dc.subjectsolveren
dc.subjectphysics, multidisciplinaryen
dc.titleDiscontinuous Galerkin Methods For The Boltzmann-Poisson Systems In Semiconductor Device Simulationsen
dc.typeArticleen
dc.description.departmentMathematicsen
dc.identifier.doi10.1063/1.3562758en
dc.contributor.utaustinauthorCheng, Yingdaen
dc.contributor.utaustinauthorGamba, Irene M.en
dc.relation.ispartofserial27th International Symposium on Rarefied Gas Dynamics, 2010, Pts One and Twoen_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record