Parameter extraction and characterization of transmission line interconnects based on high frequency measurement
New materials have been, and continue to be, introduced in an effort to reduce the impact of interconnect delay on performance. The accurate experimental characterization of on-wafer transmission lines, particularly lines using copper and low-k materials, is critically important to on-going high-speed digital integrated circuit designers. This dissertation aimed to examine the accurate electrical parameter extraction and characterization of on-wafer embedded microstrip transmission line test structures using high frequency measurements up to 40GHz in determining on-going high-speed digital integrated system performance. In particular we aimed to determine the dielectric constant and loss of low-k dielectric materials, as well as the accurate de-embedding network model of pads on interconnect parameter extraction, the impact of finite measurement precision and error propagation in on-wafer microwave measurement, and the impact of probe placement on high frequency on-wafer measurement.