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dc.contributor.advisorBanerjee, Sanjayen
dc.creatorLin, Li, 1973-en
dc.date.accessioned2008-08-28T23:07:22Zen
dc.date.available2008-08-28T23:07:22Zen
dc.date.issued2006en
dc.identifierb65470722en
dc.identifier.urihttp://hdl.handle.net/2152/2762en
dc.descriptiontexten
dc.format.mediumelectronicen
dc.language.isoengen
dc.rightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en
dc.subject.lcshSemiconductor doping--Mathematical modelsen
dc.subject.lcshSiliconen
dc.subject.lcshMonte Carlo methoden
dc.titleFirst-principles and kinetic Monte Carlo simulation of dopant diffusion in strained Si and other materialsen
dc.description.departmentElectrical and Computer Engineeringen
dc.identifier.oclc156796470en
dc.type.genreThesisen
thesis.degree.departmentElectrical and Computer Engineeringen
thesis.degree.disciplineElectrical and Computer Engineeringen
thesis.degree.grantorThe University of Texas at Austinen
thesis.degree.levelDoctoralen
thesis.degree.nameDoctor of Philosophyen


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