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dc.creatorChoi, Rinoen_US
dc.date.accessioned2008-08-28T22:23:09Z
dc.date.available2008-08-28T22:23:09Z
dc.date.created2004en_US
dc.date.issued2008-08-28T22:23:09Z
dc.identifierb60728668en_US
dc.identifier.urihttp://hdl.handle.net/2152/1907
dc.descriptiontext
dc.description.abstractNot availableen_US
dc.format.mediumelectronicen_US
dc.language.isoengen_US
dc.rightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en_US
dc.subject.lcshDielectricsen_US
dc.subject.lcshHafnium compoundsen_US
dc.subject.lcshHafnium oxideen_US
dc.subject.lcshSilicatesen_US
dc.subject.lcshMetal oxide semiconductor field-effect transistorsen_US
dc.titleProcessing and reliability studies on hafnium oxide and hafnium silicate for the advanced gate dielectric applicationen_US
dc.description.departmentMaterials Science and Engineeringen_US
dc.identifier.oclc67134608en_US
dc.identifier.proqst3143668en_US
dc.type.genreThesisen_US
thesis.degree.departmentMaterials Science and Engineeringen_US
thesis.degree.disciplineMaterials Science and Engineeringen_US
thesis.degree.grantorThe University of Texas at Austinen_US
thesis.degree.levelDoctoralen_US
thesis.degree.nameDoctor of Philosophyen_US


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