Show simple item record

dc.contributor.advisorLee, Jack Chung-Yeungen
dc.creatorChoi, Rinoen
dc.date.accessioned2008-08-28T22:23:09Zen
dc.date.available2008-08-28T22:23:09Zen
dc.date.created2004en
dc.date.issued2008-08-28T22:23:09Zen
dc.identifierb60728668en
dc.identifier.urihttp://hdl.handle.net/2152/1907en
dc.descriptiontexten
dc.description.abstractNot availableen
dc.format.mediumelectronicen
dc.language.isoengen
dc.rightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en
dc.subject.lcshDielectricsen
dc.subject.lcshHafnium compoundsen
dc.subject.lcshHafnium oxideen
dc.subject.lcshSilicatesen
dc.subject.lcshMetal oxide semiconductor field-effect transistorsen
dc.titleProcessing and reliability studies on hafnium oxide and hafnium silicate for the advanced gate dielectric applicationen
dc.description.departmentMaterials Science and Engineeringen
dc.identifier.oclc67134608en
dc.identifier.proqst3143668en
dc.type.genreThesisen
thesis.degree.departmentMaterials Science and Engineeringen
thesis.degree.disciplineMaterials Science and Engineeringen
thesis.degree.grantorThe University of Texas at Austinen
thesis.degree.levelDoctoralen
thesis.degree.nameDoctor of Philosophyen


Files in this item

Icon

This item appears in the following Collection(s)

Show simple item record