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dc.creatorXia, Tongshengen_US
dc.date.accessioned2008-08-28T22:16:26Z
dc.date.available2008-08-28T22:16:26Z
dc.date.created2005en_US
dc.date.issued2008-08-28T22:16:26Z
dc.identifierb6010126xen_US
dc.identifier.urihttp://hdl.handle.net/2152/1769
dc.descriptiontext
dc.description.abstractNot availableen_US
dc.format.mediumelectronicen_US
dc.language.isoengen_US
dc.rightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en_US
dc.subject.lcshMetal oxide semiconductor field-effect transistors--Computer simulationen_US
dc.subject.lcshIntegrated circuits--Ultra large scale integrationen_US
dc.subject.lcshNanostructured materialsen_US
dc.titleSimulation study of deep sub-micron and nanoscale semiconductor transistorsen_US
dc.description.departmentElectrical and Computer Engineeringen_US
dc.identifier.oclc62126628en_US
dc.type.genreThesisen_US
thesis.degree.departmentElectrical and Computer Engineeringen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
thesis.degree.grantorThe University of Texas at Austinen_US
thesis.degree.levelDoctoralen_US
thesis.degree.nameDoctor of Philosophyen_US


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