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dc.contributor.advisorDupuis, Russellen
dc.creatorZhu, Tinggangen
dc.date.accessioned2011-07-27T16:39:56Zen
dc.date.available2011-07-27T16:39:56Zen
dc.date.issued2003-08en
dc.identifier.urihttp://hdl.handle.net/2152/12633en
dc.descriptionen
dc.description.abstractThe group III-nitride semiconductors are enjoying an ever-increasing research interest from compound semiconductor research community due to their remarkable electrical and optical properties. The advancement of III-nitride systems has affirmed the promise of these materials for the development of various optoelectronic devices. Nitride electronic devices such as Schottky rectifiers and p-i-n rectifiers grown by MOCVD have been studied extensively. The structure design, process development and device characteristics of nitride rectifiers are elaborated in this work. Nitride optical devices such as UV emitters emitting light wavelength between 360 nm and 280 nm have been realized. The detailed study on the device simulation, process refinement and device characteristics for the improvement of device performance is presented in this dissertation.
dc.format.mediumelectronicen
dc.language.isoengen
dc.rightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en
dc.subjectMetal organic chemical vapor depositionen
dc.subjectDiodes, Semiconductoren
dc.titleThe design, processing, and characterization of group III-nitride diode devices grown by metalorganic chemical vapor depositionen
dc.description.departmentElectrical and Computer Engineeringen
thesis.degree.departmentElectrical and Computer Engineeringen
thesis.degree.disciplineElectrical and Computer Engineeringen
thesis.degree.grantorThe University of Texas at Austinen
thesis.degree.levelDoctoralen
thesis.degree.nameDoctor of Philosophyen
dc.rights.restrictionRestricteden


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