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dc.contributor.advisorKwong, Dim-Leeen
dc.creatorLee, Choong-hoen
dc.date.accessioned2011-07-08T16:00:18Zen
dc.date.available2011-07-08T16:00:18Zen
dc.date.issued2003-05en
dc.identifier.urihttp://hdl.handle.net/2152/12129en
dc.descriptiontexten
dc.description.abstractCMOS technology has been so successful in improving device performance, shrinking device size and achieving good reliability. Based on the ITRS (International Technology Roadmap for Semiconductors), a premise of the Roadmap has been that continued scaling of microelectronics. The 2001 ITRS map showed highlights several challenges such as limitation of lithography, integration of complicate structures, introducing new material into the manufacturing, and shrinking of gate oxide thickness. The most challenging issue is the replacing silicon dioxide as a gate dielectric of MOSFET because it affects important transistor characteristics as well as device reliabilities. And the other issues for the device scaled less than 65nm are polysilicon gate depletion and quantum mechanical effect. CVD oxynitride or plasma nitridation of silicon dioxide will be used 90nm generation even though high dielectric gate materials have been investigated intensively. Because there are immense task still remained to integrate high–k material into manufacturing. This dissertation will present research on advanced gate dielectrics (zirconium oxide, and hafnium oxide) processed by MOCVD (Metal Organic Chemical Vapor Deposition) method that have been developed for ULSI MOSFET devices. Also CVD TaN as well as PVD TaN metal gate electrodes were studied for hafnium oxide gate electrode MOSFET application. And it is found that zirconium oxide is compatible with metal gate process and hafnium oxide is stable for both poly silicon and metal gate electrode. And furthermore refractive metal gate electrodes (TiN, TaN) were also demonstrated with both PVD and CVD method and found CVD metal gate electrode is more preferred for future generation MOSFET device.
dc.format.mediumelectronicen
dc.language.isoengen
dc.rightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.en
dc.subjectGate array circuitsen
dc.subjectDielectricsen
dc.subjectIntegrated circuits--Ultra large scale integrationen
dc.subjectMetal organic chemical vapor depositionen
dc.subjectMetal oxide semiconductor field-effect transistors--Materialsen
dc.titleTechnology development and study of rapid thermal CVD high-K gate dielectrics and CVD metal gate electrode for future ULSI MOSFET device integration : zirconium oxide, and hafnium oxideen
dc.description.departmentElectrical and Computer Engineeringen
thesis.degree.departmentElectrical and Computer Engineeringen
thesis.degree.disciplineElectrical and Computer Engineeringen
thesis.degree.grantorThe University of Texas at Austinen
thesis.degree.levelDoctoralen
thesis.degree.nameDoctor of Philosophyen
dc.rights.restrictionRestricteden


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