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    Nanoindentation Of Si Nanostructures: Buckling And Friction At Nanoscales 

    Huang, H.; Li, B.; Zhao, Q.; Luo, Z. Q.; Im, J.; Kang, M. K.; Allen, R. A.; Cresswell, M. W.; Huang, R.; Ho, P. S. (2009-11)
    A nanoindentation system was employed to characterize mechanical properties of silicon nanolines (SiNLs), which were fabricated by an anisotropic wet etching (AWE) process. The SiNLs had the linewidth ranging from 24 nm ...
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    Line Scaling Effect On Grain Structure For Cu Interconnects 

    Zhang, L. J.; Im, J.; Ho, P. S. (2009-06)
    The effect of line scaling on Cu grain structures has been investigated by using both plan-view and cross-sectional transmission electron microscopy (TEM) techniques. Cu damascene lines with three different line widths of ...

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    Author
    Ho, P. S. (2)
    Im, J. (2)
    Allen, R. A. (1)Cresswell, M. W. (1)Huang, H. (1)Huang, R. (1)Kang, M. K. (1)Li, B. (1)Luo, Z. Q. (1)Zhang, L. J. (1)... View MoreSubject
    physics, applied (2)
    anisotropic wet etching (1)buckling (1)contact (1)cross-sectional tem (1)cu interconnects (1)displacement burst (1)fracture (1)grain (1)instability (1)... View MoreDate Issued
    2009 (2)
    DepartmentMicroelectronics Research Center (2)Has File(s)Yes (2)

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