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Characterization Of Thermal Stresses And Plasticity In Through-Silicon Via Structures For Three-Dimensional Integration
Through-silicon via (TSV) is a critical element connecting stacked dies in three-dimensional (3D) integration. The mismatch of thermal expansion coefficients between the Cu via and Si can generate significant stresses in ...
Thermomechanical Characterization And Modeling For TSV Structures
Continual scaling of devices and on-chip wiring has brought significant challenges for materials and processes beyond the 32-nm technology node in microelectronics. Recently, three-dimensional (3-D) integration with ...