A nanoindentation system was employed to characterize mechanical properties of silicon nanolines (SiNLs), which were fabricated by an anisotropic wet etching (AWE) process. The SiNLs had the linewidth ranging from 24 nm ...

The effect of line scaling on Cu grain structures has been investigated by using both plan-view and cross-sectional transmission electron microscopy (TEM) techniques. Cu damascene lines with three different line widths of ...

In 3-D interconnect structures, process-induced thermal stresses around through silicon vias (TSVs) raise serious reliability issues such as silicon cracking and performance degradation of devices. In this study, the ...