The Nuclear Engineering Teaching Laboratory (NETL) at the University of Texas at Austin performs a wide variety of educational activities for students at various levels. Regular on-site courses in the areas of health ...

Shadwick et al. developed [Commun. Nonlinear. Sci. Numer. Simulat. 17, 2153-2160 (2012)] a self-consistent model of beam transport using a phase-space moment description (up to 2nd order) based on the Vlasov-Maxwell ...

Reverse-tone Step and Flash Imprint Lithography (S-FIL/R) requires materials that can be spin coated onto patterned substrates with significant topography and that are highly-planarizing. Ideally, these planarizing materials ...

A lattice-type Monte Carlo based mesoscale model and simulation of the lithography process has been described previously [1]. The model includes the spin coating, post apply bake, exposure, post exposure bake and development ...

Laser Technology has long been the limiting and the enabling step for laser plasma accelerators. The work presented here addressed the current and near future laser technology relevant to particle acceleration as well as ...

We determine the strength of the weak nuclear force which holds the lattices of the elementary particles together. We also determine the strength of the strong nuclear force which emanates from the sides of the nuclear ...

In the present work, we propose a deterministic numerical solver for the homogeneous Boltzmann equation based on Discontinuous Galerkin (DG) methods. The weak form of the collision operator is approximated by a quadratic ...

In this paper we summarize our recent effort and results in theoretical study of the emittance issues of multistaged Laser Wakefield Accelerator (LWFA) in TeV energy range, In such an energy regime the luminosity and ...

We derived the jump conditions for Faraday's induction law at the interface of two contacting bodies in both Eulerian and Lagrangian descriptions. An algorithm to implement the jump conditions in the potential formulation ...

We report the electrical characteristics of chemical vapor deposited (CVD) monolayer molybdenum disulfide (MoS2) top-gated field-effect transistors (FETs) on silicon nitride (Si3N4) substrates. We show that Si3N4 substrates ...