Lower Hybrid [LH] ray propagation in toroidal plasma is controlled by a combination of the azimuthal spectrum launched from the antenna, the poloidal variation of the magnetic field, and the scattering of the waves by the ...

In a widely-cited paper, Glymour (Theory and Evidence, Princeton, N. J.: Princeton University Press, 1980, pp. 63-93) claims to show that Bayesians cannot team from old data. His argument contains an elementary error. I ...

Electrons, optical phonons, and acoustic phonons are often driven out of local equilibrium in electronic devices or during laser-material interaction processes. The need for a better understanding of such non-equilibrium ...

DC electrical conductivity, Seebeck and Hall coefficients are measured between 300 and 450 K on single crystals of monoclinic bismuth vanadate that are doped n-type with 0.3% tungsten donors (W:BiVO4). Strongly activated ...

An edge-free structure and hermetic encapsulation technique are presented that enable SiOx-based resistive random-access memory (RRAM) operation in air. A controlled etch study indicates that the switching filament is close ...

The nonlinear interaction of high-power multi-color laser beams in plasmas is investigated numerically. Both the relativistic mass increase and the driven plasma wave contribute to the mutual beam-beam interaction and to ...

Continual scaling of on-chip wiring structures has brought significant challenges for materials and processes beyond the 32 nm technology node in microelectronics. Recently threedimensional (3-D) integration with ...

A nanoindentation system was employed to characterize mechanical properties of silicon nanolines (SiNLs), which were fabricated by an anisotropic wet etching (AWE) process. The SiNLs had the linewidth ranging from 24 nm ...

Piezoelectric and ferroelectric materials are useful as the active element in non-destructive monitoring devices for high-radiation areas. Here, crystallographic structural refinement (i. e., the Rietveld method) is used ...

Continuous scaling of on-chip wiring structures has brought significant challenges for materials and processes beyond the 32 nm technology node in microelectronics. Recently three-dimensional (3-D) integration with ...