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Temperature Dependence Of The Electrical Resistivity Of LaxLu1-xAs

Rahimi, S.; Krivoy, E. M.; Lee, J.; Michael, M. E.; Bank, S. R.; Akinwande, D. (2013-08)

We investigate the temperature-dependent resistivity of single-crystalline films of LaxLu1-xAs over the 5-300 K range. The resistivity was separated into lattice, carrier and impurity scattering regions. The effect of ...

Crystallographic Changes In Lead Zirconate Titanate Due To Neutron Irradiation

Henriques, A.; Graham, J. T.; Landsberger, S.; Ihlefeld, J. F.; Brennecka, G. L.; Brown, D. W.; Forrester, J. S.; Jones, J. L. (2014-11)

Piezoelectric and ferroelectric materials are useful as the active element in non-destructive monitoring devices for high-radiation areas. Here, crystallographic structural refinement (i. e., the Rietveld method) is used ...

Planarizing Material For Reverse-Tone Step And Flash Imprint Lithography

Ogawa, Tsuyoshi; Takei, Satoshi; Jacobsson, B. Michael; Deschner, Ryan; Bell, William; Lin, Michael W.; Hagiwara, Yuji; Hanabata, Makoto; Willson, C. Grant (2010)

Reverse-tone Step and Flash Imprint Lithography (S-FIL/R) requires materials that can be spin coated onto patterned substrates with significant topography and that are highly-planarizing. Ideally, these planarizing materials ...

Particle Generation During Photoresist Dissolution

Chauhan, S.; Somervell, M.; Carcasi, M.; Scheer, S.; Bonnecaze, R. T.; Mack, C.; Willson, C. G. (2010)

A lattice-type Monte Carlo based mesoscale model and simulation of the lithography process has been described previously [1]. The model includes the spin coating, post apply bake, exposure, post exposure bake and development ...

Jump Conditions For Maxwell Equations And Their Consequences

Satapathy, S.; Hsieh, K. (2013-01)

We derived the jump conditions for Faraday's induction law at the interface of two contacting bodies in both Eulerian and Lagrangian descriptions. An algorithm to implement the jump conditions in the potential formulation ...

Mechanistic Study Of Plasma Damage Of Low k Dielectric Surfaces

Bao, J. J.; Shi, H. L.; Liu, J. J.; Huang, H.; Ho, P. S.; Goodner, M. D.; Moinpour, M.; Kloster, G. M. (2007-10)

Plasma damage to low k dielectric materials was investigated from a mechanistic point of view. Low k dielectric films were treated by plasma Ar, O-2, N-2/H-2, N-2 and H-2 in a standard RIE chamber and the damage was ...

Role Of Electron-Electron Scattering On Spin Transport In Single Layer Graphene

Ghosh, B.; Katiyar, S.; Salimath, A. (2014-01)

In this work, the effect of electron-electron scattering on spin transport in single layer graphene is studied using semi-classical Monte Carlo simulation. The D'yakonov-P'erel mechanism is considered for spin relaxation. ...

A Reaction Diffusion Model Of Pattern Formation In Clustering Of Adatoms On Silicon Surfaces

Bagarti, T.; Roy, A.; Kundu, K.; Dev, B. N. (2012-09)

We study a reaction diffusion model which describes the formation of patterns on surfaces having defects. Through this model, the primary goal is to study the growth process of Ge on Si surface. We consider a two species ...

Nitrogen Induced Ferromagnetism In Cobalt Doped BaTiO3

Mitra, C. (2012-08)

The electronic structure and magnetism of Cobalt doped BaTiO3 (BaTi1-xCoxO3) is investigated. Substitutional Nitrogen on an Oxygen site is found to play an important role in inducing net magnetic moments in the system. The ...

Photobase Generator Assisted Pitch Division

Gu, X. Y.; Bates, C. M.; Cho, Y. J.; Kawakami, T.; Nagai, T.; Ogata, T.; Sundaresan, A. K.; Turro, N. J.; Bristol, R.; Zimmerman, P.; Willson, C. G. (2010-02)

The drive to sustain the improvements in productivity that derive from following Moore's law has led the semiconductor industry to explore new technologies that enable production of smaller and smaller features on semiconductor ...