Deposition of epitaxial Si/Si-Ge/Ge and novel high-K gate dielectrics using remote plasma chemical vapor deposition
Abstract
Both high quality epitaxial Si/Si-Ge/Ge films and novel high-k gate
dieletrics have been deposited using an upgraded Remote Plasma Chemical Vapor
Deposition (RPCVD) system. The upgrade of the RPCVD system consisted of
two parts. The first part involved design and installation of a high-density
inductively coupled plasma (ICP) source with its peripheral units, in place of an
old surface analysis chamber. As a new deposition chamber, this chamber is
capable of generating high plasma density with significantly lower ion energy.
The second part involved modification of an existing deposition chamber for
high-k film deposition. With the final integration of the new RPCVD system,
better interfacial quality, lower thermal budget, less contamination and
autodoping, and easier process control are expected.
Experiments on epitaxial Si growth were conducted in the new RPCVD
chamber in order to characterize growth dependence on different processing
parameters. The process was extended to epitaxial Ge/SiGe films on Si that are
beyond their Critical Layer Thickness (CLT). High quality epitaxial Si1-xGex
(x>0.5) and Ge metastable films were achieved with epitaxial thicknesses at least
5 times higher than the corresponding CLT.
High-k gate dielectric growth was performed in another modified
deposition chamber. Low temperature RPCVD HfO2 was obtained with excellent
physical and electrical characteristics.
Finally, epitaxial Ge/SiGe and novel high-k dielectrics processes were
integrated to fabricate MOS capacitors. These capacitors, with excellent structural
and electrical properties, significantly increased the potential to fabricate high
channel mobility MOSFET devices using RPCVD.
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