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dc.creatorLi, Hong-jyh
dc.date.accessioned2011-05-16T21:14:18Z
dc.date.available2011-05-16T21:14:18Z
dc.date.created2002-08
dc.date.issued2011-05-16
dc.identifier.urihttp://hdl.handle.net/2152/11248
dc.descriptiontext
dc.description.abstractNot availableen_US
dc.format.mediumelectronic
dc.language.isoengen_US
dc.rightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.
dc.subjectBoron compoundsen_US
dc.subjectIon implantationen_US
dc.subjectDiffusion--Computer simulationen_US
dc.titleUltra-shallow junction formation : co-implantation and rapid thermal annealingen_US
dc.description.departmentElectrical and Computer Engineeringen_US
thesis.degree.departmentElectrical and Computer Engineeringen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
thesis.degree.grantorThe University of Texas at Austin
thesis.degree.levelDoctoralen_US
thesis.degree.nameDoctor of Philosophyen_US
dc.rights.restrictionRestricted


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