Temperature control and characterization of silicon-germanium growth by rapid thermal chemical vapor deposition
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Rapid thermal chemical vapor deposition (RTCVD) is an emerging technology to utilize low thermal budgets required to grow silicon-germanium alloys in a coherent way. However, the current state-of-the-art in RTCVD technique lacks some key elements required for acceptance of RTCVD in mainstream IC fabrication. These shortcomings include adequate control of wafer temperature during processing, and sufficient understanding of the growth kinetics. This dissertation describes and discusses the temperature control in RTCVD, the growth, and characterization of silicon-germanium alloys. The RTCVD system provides very reliable temperature-measurements, for a range of 480~820°C, based on infrared-light (1.3 or 1.55µm) absorption in the silicon wafer during the growth of silicon-germanium alloys. A wafer heat transfer model developed using the view-factor analysis is used to investigate temperature distributions with respect to lamp configurations in RTCVD system. For a precise temperature control, a neural model-based controller in single-input-single-output (SISO) system is proposed, and compared with other controllers. Silicongermanium alloys, in various semiconductor structures including dots, have been grown by RTCVD where temperature is well-controlled by the model-based controller. The structural and chemical properties of silicon-germanium alloys are characterized by X-ray diffraction, atomic force microscopy (AFM), transmission electron microscopy (TEM), and secondary ion mass spectrometry (SIMS). The different growth characteristics dominated by a silicon-source gas are exploited, and their process models are developed with the experimental data utilizing neural networks employed the Bayesian framework to accurately describe the process behaviors such as growth rate and Ge fraction in alloys with respect to process variables (to capture the process nonlinearity). By controlling growth rate and Ge fraction, a uniform and a grading Ge profile in silicon-germanium layers are demonstrated for a device fabrication. In addition, a substrate dependence of growth mechanism is utilized to form dots on dielectric materials including high k materials.