Now showing items 1-2 of 2
Ab-initio electronic structure and quantum transport calculations on quasi-two-dimensional materials for beyond Si-CMOS devices
Atomically two-dimensional (2-D) graphene, as well as the hexagonal boron nitride dielectric have been and are continuing to be widely investigated for the next generation nanoelectronic devices. More recently, other 2-D ...
Analytical models of single and double gate JFETs for low power applications
I propose compact models of single-gate (SG) and double-gate (DG) JFETs predicting the current-voltage characteristics for both long and short channel devices. In order to make the current equation continuous through all ...